Using microprobe photoluminescence we measured the electronic and lattice temperatures in operating quantum cascade lasers having similar chirped-superlattice active regions but different (GaAs/AlAs or GaAs/Al0.45Ga0.55As) conduction band discontinuities. Our results demonstrate the establishment of a thermalized hot-electron distribution. Coupling between the electronic ensemble and the lattice increases with the band-offset and influences the optical characteristics of the devices.
Influence of the band-offset on the electronic temperature of GaAs/Al(Ga)As superlattice quantum cascade lasers / Spagnolo, V.; Scamarcio, G.; Schrenk, W.; Strasser, G.. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - STAMPA. - 19:4(2004), pp. 110-112. [10.1088/0268-1242/19/4/040]
Influence of the band-offset on the electronic temperature of GaAs/Al(Ga)As superlattice quantum cascade lasers
Spagnolo, V.;
2004-01-01
Abstract
Using microprobe photoluminescence we measured the electronic and lattice temperatures in operating quantum cascade lasers having similar chirped-superlattice active regions but different (GaAs/AlAs or GaAs/Al0.45Ga0.55As) conduction band discontinuities. Our results demonstrate the establishment of a thermalized hot-electron distribution. Coupling between the electronic ensemble and the lattice increases with the band-offset and influences the optical characteristics of the devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
