We measured the electronic and lattice temperatures in steady-state operating GaAs/AlGaAs quantum-cascade lasers, by means of microprobe band-to-band photoluminescence. Thermalized hot-electron distributions with temperatures up to 800 K are established. The comparison of our data with the analysis of the temperature dependence of device optical performances shows that the threshold current is determined by the lattice temperature.
|Titolo:||Simultaneous measurement of the electronic and lattice temperatures in GaAs/Al0.45Ga0.55As quantum-cascade lasers: influence on the optical performance|
|Data di pubblicazione:||2004|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1063/1.1739518|
|Appare nelle tipologie:||1.1 Articolo in rivista|