The possibility to perform realistic fault simulations for Silicon-On-Insulator circuits is investigated. A simple but complete fault simulation model (fsm) for a technology specific effect is described. The effect considered known as kink effect is typical for partially depleted devices but can occur in the presence of a floating body or in the sub-threshold region even in fully depleted devices causing wrong performances. The model proposed here comprises of only a single additional transistor with a controlled body current. It is not a real physical transistor but just one to describe the electrical behaviour of the device when the critical kink-effect situation occurs and for this reason does not increase the simulation time. From the comparison with device characterization measurements on a 1 mum technology device a good matching with the fsm was found
Floating body effects model for fault simulation of fully depleted CMOS/SOI circuits / De Venuto, D.; Ohletz, M. J.. - In: MICROELECTRONICS JOURNAL. - ISSN 0959-8324. - STAMPA. - 34:10(2003), pp. 889-895. [10.1016/S0026-2692(03)00157-5]
Floating body effects model for fault simulation of fully depleted CMOS/SOI circuits
De Venuto, D.;
2003-01-01
Abstract
The possibility to perform realistic fault simulations for Silicon-On-Insulator circuits is investigated. A simple but complete fault simulation model (fsm) for a technology specific effect is described. The effect considered known as kink effect is typical for partially depleted devices but can occur in the presence of a floating body or in the sub-threshold region even in fully depleted devices causing wrong performances. The model proposed here comprises of only a single additional transistor with a controlled body current. It is not a real physical transistor but just one to describe the electrical behaviour of the device when the critical kink-effect situation occurs and for this reason does not increase the simulation time. From the comparison with device characterization measurements on a 1 mum technology device a good matching with the fsm was foundI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.