The aim of this paper is to present a procedure to determine the intrinsic model of Carbon NanoTube Field Effect Transistors (CNTFETs) for RF applications. In particular an active model, deduced from S parameters measurements, already proposed by us, is examined. Moreover, through a de-embedding procedure, which allows to remove random errors in measured S parameters of small-signal device, we evaluate the intrinsic model of CNTFETs to implement directly in simulation software.
|Titolo:||A Procedure to Determine the Intrinsic Model of CNTFETs for RF Applications|
|Data di pubblicazione:||2015|
|Appare nelle tipologie:||1.1 Articolo in rivista|