A novel, inexpensive device for measuring the strain of thin films during the deposition process is described. The measurement of the electrical resistance of the commercial strain gauge provides the strain values from which the stress of the film/substrate can be derived. Metallic thin films have been investigated over temperatures ranging from 22 to 100 degrees C. Plotting residual strain after cooling, it was possible to obtain the thermal strain component and its subtraction it was possible determine the intrinsic component strain. We observed a generic stress evolution from compressive to tensile, then back to compressive stress as the film thickened, in silver and copper layers. The performance of the measuring system are presented and discussed. Advantages and limitations of usage of the system are given as a conclusion.
Low cost technique for measuring in situ strain of nanostructures / Rizzo, A.; Capodieci, L.; Rizzo, D.; Galietti, U.. - In: MATERIALS SCIENCE AND ENGINEERING. C, BIOMIMETIC MATERIALS, SENSORS AND SYSTEMS. - ISSN 0928-4931. - 25:5-8(2005), pp. 820-825. [10.1016/j.msec.2005.06.029]
Low cost technique for measuring in situ strain of nanostructures
Galietti, U.
2005-01-01
Abstract
A novel, inexpensive device for measuring the strain of thin films during the deposition process is described. The measurement of the electrical resistance of the commercial strain gauge provides the strain values from which the stress of the film/substrate can be derived. Metallic thin films have been investigated over temperatures ranging from 22 to 100 degrees C. Plotting residual strain after cooling, it was possible to obtain the thermal strain component and its subtraction it was possible determine the intrinsic component strain. We observed a generic stress evolution from compressive to tensile, then back to compressive stress as the film thickened, in silver and copper layers. The performance of the measuring system are presented and discussed. Advantages and limitations of usage of the system are given as a conclusion.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
