High-diffraction-efficiency polarization-insensitive waveguide gratings formed on an AlxGa1−x As/AlyGa1−y As/GaAs double heterostructure have been designed, to our knowledge for the first time, for use in integrated optoelectronic circuits for signal processing. The calculated grating length is L = 4 mm, and outcoupling efficiencies are ηTE ≈ ηTM ≈ 1 for both air and substrate coupling at λ0 = 0.85 μm.
High-efficiency GaAs-based waveguide gratings for polarization-insensitive outcoupling / Passaro, Vittorio; Armenise, Mario N.. - In: JOURNAL OF THE OPTICAL SOCIETY OF AMERICA. A, OPTICS, IMAGE SCIENCE, AND VISION. - ISSN 1084-7529. - STAMPA. - 11:12(1994), pp. 3220-3223. [10.1364/JOSAA.11.003220]
High-efficiency GaAs-based waveguide gratings for polarization-insensitive outcoupling
Vittorio Passaro;Mario N. Armenise
1994-01-01
Abstract
High-diffraction-efficiency polarization-insensitive waveguide gratings formed on an AlxGa1−x As/AlyGa1−y As/GaAs double heterostructure have been designed, to our knowledge for the first time, for use in integrated optoelectronic circuits for signal processing. The calculated grating length is L = 4 mm, and outcoupling efficiencies are ηTE ≈ ηTM ≈ 1 for both air and substrate coupling at λ0 = 0.85 μm.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.