Thin (6-320 nm) indium tin oxide films were deposited by pulsed excimer (XeCl) laser ablation. The lowest electrical resistivity (1.6 x 10(-6) Ohm m) was measured for samples deposited on moderately heated (200 degreesC) glass substrates. Optical transmissivity of the films in the range 400-1200 nm is higher than 80%. Ultra-thin (similar to6-9 nm) films were deposited and successfully used as transparent electrodes in optoelectronic devices.
|Titolo:||Characterization of thin indium tin oxide films deposited by pulsed XeCl laser ablation|
|Data di pubblicazione:||2001|
|Digital Object Identifier (DOI):||10.1088/0022-3727/34/17/306|
|Appare nelle tipologie:||1.1 Articolo in rivista|