Thin (6-320 nm) indium tin oxide films were deposited by pulsed excimer (XeCl) laser ablation. The lowest electrical resistivity (1.6 x 10(-6) Ohm m) was measured for samples deposited on moderately heated (200 degreesC) glass substrates. Optical transmissivity of the films in the range 400-1200 nm is higher than 80%. Ultra-thin (similar to6-9 nm) films were deposited and successfully used as transparent electrodes in optoelectronic devices.
Characterization of thin indium tin oxide films deposited by pulsed XeCl laser ablation / Martino, M.; Luches, A.; Fernández, M.; Anobile, P.; Petruzzelli, V. - In: JOURNAL OF PHYSICS D. APPLIED PHYSICS. - ISSN 0022-3727. - STAMPA. - 34:17(2001), pp. 2606-2609. [10.1088/0022-3727/34/17/306]
Characterization of thin indium tin oxide films deposited by pulsed XeCl laser ablation
Petruzzelli V
2001-01-01
Abstract
Thin (6-320 nm) indium tin oxide films were deposited by pulsed excimer (XeCl) laser ablation. The lowest electrical resistivity (1.6 x 10(-6) Ohm m) was measured for samples deposited on moderately heated (200 degreesC) glass substrates. Optical transmissivity of the films in the range 400-1200 nm is higher than 80%. Ultra-thin (similar to6-9 nm) films were deposited and successfully used as transparent electrodes in optoelectronic devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
