Thin (6-320 nm) indium tin oxide films were deposited by pulsed excimer (XeCl) laser ablation. The lowest electrical resistivity (1.6 x 10(-6) Ohm m) was measured for samples deposited on moderately heated (200 degreesC) glass substrates. Optical transmissivity of the films in the range 400-1200 nm is higher than 80%. Ultra-thin (similar to6-9 nm) films were deposited and successfully used as transparent electrodes in optoelectronic devices.

Characterization of thin indium tin oxide films deposited by pulsed XeCl laser ablation / Martino, M.; Luches, A.; Fernández, M.; Anobile, P.; Petruzzelli, V. - In: JOURNAL OF PHYSICS D. APPLIED PHYSICS. - ISSN 0022-3727. - STAMPA. - 34:17(2001), pp. 2606-2609. [10.1088/0022-3727/34/17/306]

Characterization of thin indium tin oxide films deposited by pulsed XeCl laser ablation

Petruzzelli V
2001-01-01

Abstract

Thin (6-320 nm) indium tin oxide films were deposited by pulsed excimer (XeCl) laser ablation. The lowest electrical resistivity (1.6 x 10(-6) Ohm m) was measured for samples deposited on moderately heated (200 degreesC) glass substrates. Optical transmissivity of the films in the range 400-1200 nm is higher than 80%. Ultra-thin (similar to6-9 nm) films were deposited and successfully used as transparent electrodes in optoelectronic devices.
2001
Characterization of thin indium tin oxide films deposited by pulsed XeCl laser ablation / Martino, M.; Luches, A.; Fernández, M.; Anobile, P.; Petruzzelli, V. - In: JOURNAL OF PHYSICS D. APPLIED PHYSICS. - ISSN 0022-3727. - STAMPA. - 34:17(2001), pp. 2606-2609. [10.1088/0022-3727/34/17/306]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/5965
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