Generic InP foundry processes allow monolithic integration of active and passive elements into a common p-n doped layerstack. The passive loss can be greatly reduced by restricting the p-dopant to active regions. We report on a localized Zn-diffusion process based on MOVPE, which allows to reduce waveguide loss from 2 dB/cm to below 0.4 dB/cm. We confirm this value by fabrication of a 73 mm long spiral ring resonator, with a record quality factor of 1.2 million and an extinction ratio of 9.7 dB.
Low-loss passive waveguides in a generic InP foundry process via local diffusion of zinc / D'Agostino, D.; Carnicella, G.; Ciminelli, Caterina; Thijs, P.; Veldhoven, P. J; Ambrosius, H.; Smit, M.. - In: OPTICS EXPRESS. - ISSN 1094-4087. - 23:19(2015), pp. 25143-25157. [10.1364/OE.23.025143]
Low-loss passive waveguides in a generic InP foundry process via local diffusion of zinc
CIMINELLI, Caterina;
2015-01-01
Abstract
Generic InP foundry processes allow monolithic integration of active and passive elements into a common p-n doped layerstack. The passive loss can be greatly reduced by restricting the p-dopant to active regions. We report on a localized Zn-diffusion process based on MOVPE, which allows to reduce waveguide loss from 2 dB/cm to below 0.4 dB/cm. We confirm this value by fabrication of a 73 mm long spiral ring resonator, with a record quality factor of 1.2 million and an extinction ratio of 9.7 dB.| File | Dimensione | Formato | |
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