This paper presents a comparison of temperature dependence of I-V characteristics in Carbon Nanotube Field Effect Transistors (CNTFETs) models proposed in literature in order to identify the one more easily implementable in simulation software for electronic circuit design. At first we consider a compact, semi-empirical model, already proposed by us, performing I-V characteristic simulations at different temperatures. Our results are compared with those obtained with two other models: the numerical FETToy model and the Stanford-Source Virtual Carbon Nanotube Field-Effect Transistor model (VS-CNFET), obtaining I-V characteristics comparable with those of two examined models, but with CPU calculation times much lower.
A Comparison of Temperature Dependence of I-V Characteristics in CNTFETs Models / Gelao, Gennaro; Marani, Roberto; Perri, Anna Gina. - In: CURRENT NANOMATERIALS. - ISSN 2405-4615. - STAMPA. - 1:1(2016), pp. 61-68. [10.2174/2405461501666160323005447]
A Comparison of Temperature Dependence of I-V Characteristics in CNTFETs Models
GELAO, Gennaro;MARANI, ROBERTO;PERRI, Anna Gina
2016-01-01
Abstract
This paper presents a comparison of temperature dependence of I-V characteristics in Carbon Nanotube Field Effect Transistors (CNTFETs) models proposed in literature in order to identify the one more easily implementable in simulation software for electronic circuit design. At first we consider a compact, semi-empirical model, already proposed by us, performing I-V characteristic simulations at different temperatures. Our results are compared with those obtained with two other models: the numerical FETToy model and the Stanford-Source Virtual Carbon Nanotube Field-Effect Transistor model (VS-CNFET), obtaining I-V characteristics comparable with those of two examined models, but with CPU calculation times much lower.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.