We have investigated the band-to-band photoluminescence of In0.53Ga0.47As/AlAs0.56Sb0.44 quantum-cascade devices operating at lambda similar to 4.3 mu m, based either on normally grown or nominally As-terminated interfaces. This technique allowed us to probe the spatial distribution of conduction electrons as a function of the applied voltage and to correlate the quantum design of devices with their thermal performance.
Electronic spatial distribution of In0.53Ga0.47As/AlAs0.56Sb0.44 quantum-cascade lasers / Vitiello, M. S.; Scamarcio, G.; Spagnolo, V.; Revin, D. G.; Cockburn, J.; Steer, M. J.; Airey, R. J.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 98:8(2005). [10.1063/1.2113416]
Electronic spatial distribution of In0.53Ga0.47As/AlAs0.56Sb0.44 quantum-cascade lasers
Spagnolo, V.;
2005-01-01
Abstract
We have investigated the band-to-band photoluminescence of In0.53Ga0.47As/AlAs0.56Sb0.44 quantum-cascade devices operating at lambda similar to 4.3 mu m, based either on normally grown or nominally As-terminated interfaces. This technique allowed us to probe the spatial distribution of conduction electrons as a function of the applied voltage and to correlate the quantum design of devices with their thermal performance.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
