We have investigated the band-to-band photoluminescence of In0.53Ga0.47As/AlAs0.56Sb0.44 quantum-cascade devices operating at lambda similar to 4.3 mu m, based either on normally grown or nominally As-terminated interfaces. This technique allowed us to probe the spatial distribution of conduction electrons as a function of the applied voltage and to correlate the quantum design of devices with their thermal performance.
|Titolo:||Electronic spatial distribution of In0.53Ga0.47As/AlAs0.56Sb0.44 quantum-cascade lasers|
|Data di pubblicazione:||2005|
|Digital Object Identifier (DOI):||10.1063/1.2113416|
|Appare nelle tipologie:||1.1 Articolo in rivista|