We compare the electrical power dependence of the lattice temperature and the electronic temperature of GaAs/AlxGa1-xAs THz quantum cascade lasers (QCLs) with different active region schemes, as extracted by the analysis of microprobe band-to-band photoluminescence experiments. Thermalized non-equilibrium distributions are found in all classes of QCLs. While in the case of bound-to-continuum structures all subbands share the same temperature, the upper laser level of active regions based on the resonant-phonon scheme heats up by ΔT ~ 100 K with respect to lower energy levels. The comparison among samples with different Al mole fractions show that the use of smaller x values leads to larger electronic temperatures.
Hot Electrons in THz Quantum Cascade Lasers / Scamarcio, G.; Vitiello, M. S.; Spagnolo, Vincenzo Luigi. - In: JOURNAL OF INFRARED, MILLIMETER, AND TERAHERTZ WAVES. - ISSN 1866-6892. - 34:5-6(2013), pp. 357-373. [10.1007/s10762-013-9979-1]
Hot Electrons in THz Quantum Cascade Lasers
SPAGNOLO, Vincenzo Luigi
2013-01-01
Abstract
We compare the electrical power dependence of the lattice temperature and the electronic temperature of GaAs/AlxGa1-xAs THz quantum cascade lasers (QCLs) with different active region schemes, as extracted by the analysis of microprobe band-to-band photoluminescence experiments. Thermalized non-equilibrium distributions are found in all classes of QCLs. While in the case of bound-to-continuum structures all subbands share the same temperature, the upper laser level of active regions based on the resonant-phonon scheme heats up by ΔT ~ 100 K with respect to lower energy levels. The comparison among samples with different Al mole fractions show that the use of smaller x values leads to larger electronic temperatures.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.