The luminosity upgrade of the CERN Large Hadron Collider (SLHC) imposes severe requirements on the radiation hardness of the tracking systems. The CERN RD50 collaboration as well as the Italian INFN SMART project (fifth commission) are focused on the study of new radiation hard materials and devices in view of this upgrade. Preliminary studies on irradiated high resistivity n- and p-type magnetic Czochralski silicon are described in this paper. Electrical characterization and microscopic defect studies were performed on a wide set of diodes made with both n- and p-type float zone and magnetic Czochralski silicon irradiated up to a nominal fluence of 3 x 10(15)cm(-2) 1 MeV equivalent neutrons. The annealing behavior was studied in detail and a first evaluation of the damage-related parameters is shown. (c) 2006 Elsevier B.V. All rights reserved.
Radiation hardness of high resistivity n- and p-type magnetic Czochralski silicon / Segneri, G.; Borrello, L.; Boscardin, M.; Bruzzi, M.; Creanza, Donato Maria; Dalla Betta, G. F.; De Palma, M.; Focardi, E.; Macchiolo, A.; Manna, N.; Menichelli, D.; Messineo, A.; Piemonte, C.; Radicci, V.; Ronchin, S.; Scaringella, M.; Sentenac, D.; Zorzi, N.. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - 573:1-2(2007), pp. 283-286. [10.1016/j.nima.2006.10.262]
Radiation hardness of high resistivity n- and p-type magnetic Czochralski silicon
CREANZA, Donato Maria;
2007-01-01
Abstract
The luminosity upgrade of the CERN Large Hadron Collider (SLHC) imposes severe requirements on the radiation hardness of the tracking systems. The CERN RD50 collaboration as well as the Italian INFN SMART project (fifth commission) are focused on the study of new radiation hard materials and devices in view of this upgrade. Preliminary studies on irradiated high resistivity n- and p-type magnetic Czochralski silicon are described in this paper. Electrical characterization and microscopic defect studies were performed on a wide set of diodes made with both n- and p-type float zone and magnetic Czochralski silicon irradiated up to a nominal fluence of 3 x 10(15)cm(-2) 1 MeV equivalent neutrons. The annealing behavior was studied in detail and a first evaluation of the damage-related parameters is shown. (c) 2006 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
