The aim of this work is the development of radiation hard detectors for very high luminosity colliders. A growing interest has been recently focused on Czochralski silicon as a potentially radiation-hard material. We report on the processing and characterization of micro-strip sensors and pad detectors produced by ITC-IRST on n- and p-type magnetic Czochralski and float zone silicon. Part of the samples has been irradiated using 24 GeV/c protons (CERN-Geneva), while another part has been irradiated with 26 MeV protons (FZK-Karisruhe) up to a fluence of 5 x 10(15) 1 MeV-neutron-equivalent/cmz. All the samples have been completely characterized before and after irradiation. Their radiation hardness as a function of the irradiation fluence has been established in terms of breakdown voltage, leakage current and evaluating the more relevant mini-sensor parameter variation. Moreover, the time evolution of depletion voltage, leakage current and inter-strip capacitance has been monitored in order to study their annealing behavior and space charge sign inversion effects. (c) 2006 Elsevier B.V. All rights reserved.
|Titolo:||Study of radiation damage induced by 24 GeV/c and 26 MeV protons on heavily irradiated MCz and FZ silicon detectors|
|Data di pubblicazione:||2007|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1016/j.nima.2006.09.034|
|Appare nelle tipologie:||1.1 Articolo in rivista|