Silicon diodes (pad detectors) were irradiated with 24 GeV/c protons at he CERN PS IRRAD1 facility and with neutrons at the TRIGA reactor in Ljubljana (Slovenia). The diodes were realized on Magnetic Czochralski (MCz) grown silicon, of both n- and p-type. After irradiation, an annealing study with CV measurements was performed on 24 GeV/c proton irradiated detectors, looking for hints of type inversion after irradiation and during annealing. Other pad detectors were studied using the TCT (transient current technique), to gather information about the field profile in the detector bulk and thus about the effective space charge distribution within it. (C) 2009 Elsevier B.V. All rights reserved
A TCT and annealing study on Magnetic Czochralski silicon detectors irradiated with neutrons and 24 GeV/c protons / Pacifico, N.; Creanza, Donato Maria; de Palma, M.; Manna, N.; Kramberger, G.; Moll, M.. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - 612:3(2010), pp. 549-554. [10.1016/j.nima.2009.08.019]
A TCT and annealing study on Magnetic Czochralski silicon detectors irradiated with neutrons and 24 GeV/c protons
CREANZA, Donato Maria;
2010-01-01
Abstract
Silicon diodes (pad detectors) were irradiated with 24 GeV/c protons at he CERN PS IRRAD1 facility and with neutrons at the TRIGA reactor in Ljubljana (Slovenia). The diodes were realized on Magnetic Czochralski (MCz) grown silicon, of both n- and p-type. After irradiation, an annealing study with CV measurements was performed on 24 GeV/c proton irradiated detectors, looking for hints of type inversion after irradiation and during annealing. Other pad detectors were studied using the TCT (transient current technique), to gather information about the field profile in the detector bulk and thus about the effective space charge distribution within it. (C) 2009 Elsevier B.V. All rights reservedI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
