We are pursuing scribe-cleave-passivate (SCP) technology of making "slim edge" sensors. Such sensors have only a minimal amount of inactive peripheral region, which benefits construction of large area tracker and imaging systems. Key application steps of this method are surface scribing, cleaving, and passivation of the resulting sidewall. We are working on developing both the technology and physical understanding of the processed devices performance. In this paper we begin by reviewing the manufacturing options of SCP technology. Then we show new results regarding the technology automation and device physics performance. The latter includes charge collection efficiency near the edge and radiation hardness study. We also report on the status of devices processed at the request of the RD50 collaborators. (C) 2013 Elsevier B.V. All rights resented.
Scribe-cleave-passivate (SCP) slim edge technology for silicon sensors / Fadeyev, V.; Sadrozinski, H. F. W.; Ely, S.; Wright, J. G.; Christophersen, M.; Phlips, B. F.; Pellegrini, G.; Grinstein, S.; Dalla Betta, G. F.; Boscardin, M.; Klingenberg, R.; Wittig, T.; Macchiolo, A.; Weigell, P.; Creanza, Donato Maria; Bates, R.; Blue, A.; Eklund, L.; Maneuski, D.; Stewart, G.; Casse, G.; Gorelov, I.; Hoeferkamp, M.; Metcalfe, J.; Seidel, S.; Kramberger, G.. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - 731:(2013), pp. 260-265. [10.1016/j.nima.2013.03.046]
Scribe-cleave-passivate (SCP) slim edge technology for silicon sensors
CREANZA, Donato Maria;
2013-01-01
Abstract
We are pursuing scribe-cleave-passivate (SCP) technology of making "slim edge" sensors. Such sensors have only a minimal amount of inactive peripheral region, which benefits construction of large area tracker and imaging systems. Key application steps of this method are surface scribing, cleaving, and passivation of the resulting sidewall. We are working on developing both the technology and physical understanding of the processed devices performance. In this paper we begin by reviewing the manufacturing options of SCP technology. Then we show new results regarding the technology automation and device physics performance. The latter includes charge collection efficiency near the edge and radiation hardness study. We also report on the status of devices processed at the request of the RD50 collaborators. (C) 2013 Elsevier B.V. All rights resented.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
