We have developed a full Monte Carlo simulation code to evaluate the electric signals produced by ionizing particles crossing a silicon strip detector (SSD). This simulation can be applied in the design stage of a SSD, to optimize the detector parameters. All the physical processes leading to the generation of electron-hole (e-h) pairs in silicon have been taken into account. Induced current signals on the readout strips are evaluated applying the Shockley-Ramo's theorem to the charge carriers propagating inside the detector volume. A simulation of the readout electronics has been also implemented. The Monte Carlo results have been compared with experimental data taken with a 400 mu m thick SSD.
A full Monte Carlo simulation code for silicon strip detectors / Brigida, M; Favuzzi, Cecilia; Fusco, P; Gargano, F; Giglietto, Nicola; Giordano, F; Loparco, F; Marangelli, B; Mazziotta, Mn; Mirizzi, N; Raino, S; Spinelli, P.. - In: NUCLEAR PHYSICS B-PROCEEDINGS SUPPLEMENTS. - ISSN 0920-5632. - 150:1-3(2006), pp. 58-61. [10.1016/j.nuclphysbps.2004.11.383]
A full Monte Carlo simulation code for silicon strip detectors
FAVUZZI, Cecilia;GIGLIETTO, Nicola;
2006-01-01
Abstract
We have developed a full Monte Carlo simulation code to evaluate the electric signals produced by ionizing particles crossing a silicon strip detector (SSD). This simulation can be applied in the design stage of a SSD, to optimize the detector parameters. All the physical processes leading to the generation of electron-hole (e-h) pairs in silicon have been taken into account. Induced current signals on the readout strips are evaluated applying the Shockley-Ramo's theorem to the charge carriers propagating inside the detector volume. A simulation of the readout electronics has been also implemented. The Monte Carlo results have been compared with experimental data taken with a 400 mu m thick SSD.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
