The influence of high energy radiations on the performance of silicon-on-insulator photonic devices, such as straight waveguides, ring resonators and Raman lasers based on resonant microcavities, has been investigated theoretically in the near infrared. The modeling is based on a generalized full-vectorial wave equation system which also includes deep defect rate equations. Simulation results are compared with the state-of-the-art, demonstrating a very good agreement between theoretical predictions and experiments reported in literature in the case of both ionizing and nonionizing events. Moreover, a parametric analysis is presented in order to investigate the degradation mechanisms of photonic device performance that occur under the influence of radiation bombardment.
|Titolo:||Modeling of Radiation Effects in Silicon Photonic Devices|
|Data di pubblicazione:||2015|
|Digital Object Identifier (DOI):||10.1109/TNS.2015.2469671|
|Appare nelle tipologie:||1.1 Articolo in rivista|