A pin photodiode monolithically integrated with a bias resistor and a JFET-based source follower is presented. Results from static and dynamic characterisation of the structure are reported, together with SPICE simulations used to design an optimised device which can be fabricated in the same technology. This structure can be employed as a pixel in linear X-ray scanners for non-destructive inspection.
|Titolo:||Silicon pin detector with integrated JFET-based source follower|
|Data di pubblicazione:||2004|
|Digital Object Identifier (DOI):||10.1049/el:20046137|
|Appare nelle tipologie:||1.1 Articolo in rivista|