In this paper we present a model of Carbon Nanotube Field Effect Transistor (CNTFET) to be used for electronic circuit design. The model, with a classical behaviour (MOSFET-like CNTFET), is based on analytical approximations and parameters extracted from quantum mechanical simulations of the device to avoid the resort to self-consistency. The proposed algorithm has been implemented, considering the contribution to the conduction from the first three sub-bands, and the results have been compared with those of the numerical model online available, showing a relative error less than 5%. In order to demonstrate its versatility, the model has been employed to design basic logic gates.
|Titolo:||CNTFET Modelling for Electronic Circuit Design|
|Data di pubblicazione:||2009|
|Digital Object Identifier (DOI):||10.1149/1.3183748|
|Appare nelle tipologie:||1.1 Articolo in rivista|