In this paper we present a model of Carbon Nanotube Field Effect Transistor (CNTFET) to be used for electronic circuit design. The model, with a classical behaviour (MOSFET-like CNTFET), is based on analytical approximations and parameters extracted from quantum mechanical simulations of the device to avoid the resort to self-consistency. The proposed algorithm has been implemented, considering the contribution to the conduction from the first three sub-bands, and the results have been compared with those of the numerical model online available, showing a relative error less than 5%. In order to demonstrate its versatility, the model has been employed to design basic logic gates.
CNTFET Modelling for Electronic Circuit Design / Marani, R; Perri, Anna Gina. - In: ECS TRANSACTIONS. - ISSN 1938-5862. - 23:1(2009), pp. 429-437. (Intervento presentato al convegno “Chip on the Dunes”, Int. Symposium on Microelectronics Technology and Devices (SBMicro 2009) tenutosi a Natal, BRAZIL nel 31 agosto - 3 settembre 2009) [10.1149/1.3183748].
CNTFET Modelling for Electronic Circuit Design
PERRI, Anna Gina
2009-01-01
Abstract
In this paper we present a model of Carbon Nanotube Field Effect Transistor (CNTFET) to be used for electronic circuit design. The model, with a classical behaviour (MOSFET-like CNTFET), is based on analytical approximations and parameters extracted from quantum mechanical simulations of the device to avoid the resort to self-consistency. The proposed algorithm has been implemented, considering the contribution to the conduction from the first three sub-bands, and the results have been compared with those of the numerical model online available, showing a relative error less than 5%. In order to demonstrate its versatility, the model has been employed to design basic logic gates.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
