In this paper, we analyze the effects of temperature dependence of energy bandgap on I−V characteristics in some carbon nanotube field effect transistors (CNTFETs) models proposed in literature in order to identify the one more suitable for computer aided design (CAD) applications. At first we consider a compact, semi-empirical model, already proposed by us, performing I−V characteristic simulations at different temperatures. Our results are compared with those obtained with the Stanford-Source virtual carbon nanotube field-effect transistor model (VS-CNFET), obtaining I−V characteristics comparable, but with lower CPU calculation time.
|Titolo:||Effects of Temperature Dependence of Energy Bandgap on I–V Characteristics in CNTFETs Models|
|Data di pubblicazione:||2017|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1142/S0219581X17500090|
|Appare nelle tipologie:||1.1 Articolo in rivista|