A semi-empirical approach to model the temperature effects on I-V characteristics of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model includes two thermal parameters describing CNTFET behaviour in terms of saturation drain current and threshold voltage, whose values are extracted from the simulated and trans-characteristics of the device in different temperature conditions. Our results are compared with those of a numerical model online available, obtaining I-V characteristics comparable but with a lower CPU calculation time.
An Approach to Model the Temperature Effects on I-V Characteristics of CNTFETs / Marani, Roberto; Perri, Anna Gina. - In: ADVANCES IN NANO RESEARCH. - ISSN 2287-237X. - 5:1(2017), pp. 61-67. [10.12989/anr.2017.5.1.061]
An Approach to Model the Temperature Effects on I-V Characteristics of CNTFETs
MARANI, ROBERTO;PERRI, Anna Gina
2017-01-01
Abstract
A semi-empirical approach to model the temperature effects on I-V characteristics of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model includes two thermal parameters describing CNTFET behaviour in terms of saturation drain current and threshold voltage, whose values are extracted from the simulated and trans-characteristics of the device in different temperature conditions. Our results are compared with those of a numerical model online available, obtaining I-V characteristics comparable but with a lower CPU calculation time.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
