Extensive intramolecular π-conjugation is considered to be requisite in the design of organic semiconductors. Here, two inkjet pigments, epindolidione and quinacridone, that break this design rule are explored. These molecules afford intermolecular π-stacking reinforced by hydrogen-bonding bridges. Air-stable organic field effect transistors are reported that support mobilities up to 1.5 cm2/Vs with T80 lifetimes comparable with the most stable reported organic semiconducting materials.

Hydrogen-bonded semiconducting pigments for air-stable field-effect transistors / Eric Daniel, Głowacki; Mihai Irimia, Vladu; Martin, Kaltenbrunner; Jacek, Ga̧siorowski; Matthew S., White; Uwe, Monkowius; Romanazzi, Giuseppe; Suranna, Gian Paolo; Mastrorilli, Pietro; Tsuyoshi, Sekitani; Siegfried, Bauer; Takao, Someya; Luisa, Torsi; Niyazi Serdar, Sariciftci. - In: ADVANCED MATERIALS. - ISSN 0935-9648. - 25:11(2013), pp. 1563-1569. [10.1002/adma.201204039]

Hydrogen-bonded semiconducting pigments for air-stable field-effect transistors

ROMANAZZI, Giuseppe;SURANNA, Gian Paolo;MASTRORILLI, Pietro;
2013-01-01

Abstract

Extensive intramolecular π-conjugation is considered to be requisite in the design of organic semiconductors. Here, two inkjet pigments, epindolidione and quinacridone, that break this design rule are explored. These molecules afford intermolecular π-stacking reinforced by hydrogen-bonding bridges. Air-stable organic field effect transistors are reported that support mobilities up to 1.5 cm2/Vs with T80 lifetimes comparable with the most stable reported organic semiconducting materials.
2013
http://onlinelibrary.wiley.com/doi/10.1002/adma.201370068/abstract
Hydrogen-bonded semiconducting pigments for air-stable field-effect transistors / Eric Daniel, Głowacki; Mihai Irimia, Vladu; Martin, Kaltenbrunner; Jacek, Ga̧siorowski; Matthew S., White; Uwe, Monkowius; Romanazzi, Giuseppe; Suranna, Gian Paolo; Mastrorilli, Pietro; Tsuyoshi, Sekitani; Siegfried, Bauer; Takao, Someya; Luisa, Torsi; Niyazi Serdar, Sariciftci. - In: ADVANCED MATERIALS. - ISSN 0935-9648. - 25:11(2013), pp. 1563-1569. [10.1002/adma.201204039]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/1005
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