In this paper we present, through the design of a basic and a cascode current mirror, a comparison between CNTFET and MOS technology. For every simulation parameters of merit, such as relative error in reference current replication and small-signal output resistance, are evaluated in order to show the differences between CNTFET and MOS technology and the advantages of the first for analog VLSI circuits.
CNTFET-based Design of Current Mirror in Comparison with MOS Technology / Marani, Roberto; Perri, Anna Gina. - In: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. - ISSN 2162-8769. - 6:5(2017), pp. M60-M68. [10.1149/2.0261705jss]
CNTFET-based Design of Current Mirror in Comparison with MOS Technology
MARANI, ROBERTO;PERRI, Anna Gina
2017-01-01
Abstract
In this paper we present, through the design of a basic and a cascode current mirror, a comparison between CNTFET and MOS technology. For every simulation parameters of merit, such as relative error in reference current replication and small-signal output resistance, are evaluated in order to show the differences between CNTFET and MOS technology and the advantages of the first for analog VLSI circuits.File in questo prodotto:
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