The measurement of thermal resistance and facet temperature profile of operating GaAs/AlGaAs quantum cascade lasers (QCLs) as a function of injected current, repetition rate and pulse width is reported. The use of microprobe band-to-band photoluminescence (PL) spectroscopy allows to achieve a spatial resolution <1 mum. Substrate-side and epilayer-side mounted devices with identical laser structures were investigated. At T = 80 K, the thermal resistance of epilayer-side mounted devices (7.8 K/W) is similar to 30% lower than that of substrate-side mounted devices, thus explaining the better performance of the former. The outcome of a two-dimensional model of heat propagation in our structures is compared with the experimental data
Facet temperature mapping of GaAs/AlGaAs quantum cascade lasers by photoluminescence microprobe / Spagnolo, V.; Troccoli, M.; Scamarcio, G.; Becker, C.; Glastre, G.; Sirtori, C.. - In: OPTICAL MATERIALS. - ISSN 0925-3467. - STAMPA. - 17:1-2(2001), pp. 219-222. [10.1016/S0925-3467(01)00083-0]
Facet temperature mapping of GaAs/AlGaAs quantum cascade lasers by photoluminescence microprobe
Spagnolo, V.;
2001-01-01
Abstract
The measurement of thermal resistance and facet temperature profile of operating GaAs/AlGaAs quantum cascade lasers (QCLs) as a function of injected current, repetition rate and pulse width is reported. The use of microprobe band-to-band photoluminescence (PL) spectroscopy allows to achieve a spatial resolution <1 mum. Substrate-side and epilayer-side mounted devices with identical laser structures were investigated. At T = 80 K, the thermal resistance of epilayer-side mounted devices (7.8 K/W) is similar to 30% lower than that of substrate-side mounted devices, thus explaining the better performance of the former. The outcome of a two-dimensional model of heat propagation in our structures is compared with the experimental dataI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
