The measurement of thermal resistance and facet temperature profile of operating GaAs/AlGaAs quantum cascade lasers (QCLs) as a function of injected current, repetition rate and pulse width is reported. The use of microprobe band-to-band photoluminescence (PL) spectroscopy allows to achieve a spatial resolution <1 mum. Substrate-side and epilayer-side mounted devices with identical laser structures were investigated. At T = 80 K, the thermal resistance of epilayer-side mounted devices (7.8 K/W) is similar to 30% lower than that of substrate-side mounted devices, thus explaining the better performance of the former. The outcome of a two-dimensional model of heat propagation in our structures is compared with the experimental data

Facet temperature mapping of GaAs/AlGaAs quantum cascade lasers by photoluminescence microprobe

Spagnolo, V.;
2001

Abstract

The measurement of thermal resistance and facet temperature profile of operating GaAs/AlGaAs quantum cascade lasers (QCLs) as a function of injected current, repetition rate and pulse width is reported. The use of microprobe band-to-band photoluminescence (PL) spectroscopy allows to achieve a spatial resolution <1 mum. Substrate-side and epilayer-side mounted devices with identical laser structures were investigated. At T = 80 K, the thermal resistance of epilayer-side mounted devices (7.8 K/W) is similar to 30% lower than that of substrate-side mounted devices, thus explaining the better performance of the former. The outcome of a two-dimensional model of heat propagation in our structures is compared with the experimental data
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11589/10471
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