An improved DC model of low- and high-power GaAs MESFETs is proposed. Third-order dependence of fitting parameters on bias conditions is included. The main objective is to obtain a very good agreement between measured and simulated I-V curves, particularly in the knee and saturation regions, regardless of the technological characteristics of the device. The model has been compared with the most significant models presented in the literature, showing some significant improvements of the state-of-the-art.
DC model of GaAs MESFET’s improving circuit simulation / Giorgio, Agostino; Passaro, Vittorio; Perri, Anna Gina. - In: IEE PROCEEDINGS. CIRCUITS, DEVICES AND SYSTEMS. - ISSN 1350-2409. - 147:(2000), pp. 139-145. [10.1049/ip-cds:20000051]
DC model of GaAs MESFET’s improving circuit simulation
GIORGIO, Agostino;PASSARO, Vittorio;PERRI, Anna Gina
2000-01-01
Abstract
An improved DC model of low- and high-power GaAs MESFETs is proposed. Third-order dependence of fitting parameters on bias conditions is included. The main objective is to obtain a very good agreement between measured and simulated I-V curves, particularly in the knee and saturation regions, regardless of the technological characteristics of the device. The model has been compared with the most significant models presented in the literature, showing some significant improvements of the state-of-the-art.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
