The principal noise sources of GaAs MESFETs are taken into account in order to completely characterize the equivalent circuit model that has been utilized in the design of a low-noise small-signal amplifier for optical receivers. The total input noise current of the amplifier, due to correlated gate and drain MESFET noise, has been estimated for evaluating the excess channel noise factor Γ for different values of the photodiode capacitance. A method is demonstrated for easy identification of the matching network parameters and photodiode capacitance that minimize the noise. Finally, the minimum noise gain, gain-frequency dependence, input and output voltage standing wave ratios, noise figure, and bandwidth of the amplifier are evaluated in the 8 to 12 GHz frequency range

Noise characterization of GaAs MESFETs for the design of optical amplifiers

Perri, Anna G.;Armenise, Mario N.;Corsi, Francesco
1990-01-01

Abstract

The principal noise sources of GaAs MESFETs are taken into account in order to completely characterize the equivalent circuit model that has been utilized in the design of a low-noise small-signal amplifier for optical receivers. The total input noise current of the amplifier, due to correlated gate and drain MESFET noise, has been estimated for evaluating the excess channel noise factor Γ for different values of the photodiode capacitance. A method is demonstrated for easy identification of the matching network parameters and photodiode capacitance that minimize the noise. Finally, the minimum noise gain, gain-frequency dependence, input and output voltage standing wave ratios, noise figure, and bandwidth of the amplifier are evaluated in the 8 to 12 GHz frequency range
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/10534
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