In this paper we present the design criteria of Lightly Doped Drain (LDD) MOSFETs through the study of the influence of the n- doping of drain/source on the electric field, but taking into account also the impact of LDD on series resistance of the device and the channel length contribution on breakdown voltage reduction.
Design Criteria of LDD MOSFET Devices / Marani, Roberto; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF ADVANCES IN ENGINEERING AND TECHNOLOGY. - ISSN 2231-1963. - 10:3(2017), pp. 299-308.
Design Criteria of LDD MOSFET Devices
MARANI, ROBERTO;PERRI, Anna Gina
2017-01-01
Abstract
In this paper we present the design criteria of Lightly Doped Drain (LDD) MOSFETs through the study of the influence of the n- doping of drain/source on the electric field, but taking into account also the impact of LDD on series resistance of the device and the channel length contribution on breakdown voltage reduction.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
