In this paper we present the design criteria of Lightly Doped Drain (LDD) MOSFETs through the study of the influence of the n- doping of drain/source on the electric field, but taking into account also the impact of LDD on series resistance of the device and the channel length contribution on breakdown voltage reduction.

Design Criteria of LDD MOSFET Devices / Marani, Roberto; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF ADVANCES IN ENGINEERING AND TECHNOLOGY. - ISSN 2231-1963. - 10:3(2017), pp. 299-308.

Design Criteria of LDD MOSFET Devices

MARANI, ROBERTO;PERRI, Anna Gina
2017-01-01

Abstract

In this paper we present the design criteria of Lightly Doped Drain (LDD) MOSFETs through the study of the influence of the n- doping of drain/source on the electric field, but taking into account also the impact of LDD on series resistance of the device and the channel length contribution on breakdown voltage reduction.
2017
Design Criteria of LDD MOSFET Devices / Marani, Roberto; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF ADVANCES IN ENGINEERING AND TECHNOLOGY. - ISSN 2231-1963. - 10:3(2017), pp. 299-308.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/109825
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