Praseodymium-doped selenide thin films are deposited by radio frequency magnetron sputtering on thermally oxidized silicon wafers and undoped selenide layers. Ridge waveguides are then processed using photolithography and dry etching techniques. Under optical pumping at 1.55 μm, broadband guided mid-infrared photoluminescence is recorded for the first time for wavelengths above 4 μm from rare earth-doped integrated chalcogenides waveguides. Optical design confirmed that these active waveguides allow single-mode optical propagation at a wavelength of 4.70 μm.
Mid-infrared guided photoluminescence from integrated Pr3+-doped selenide ridge waveguides / Bodiou, L.; Starecki, F.; Lemaitre, J.; Nazabal, V.; Doualan, J. -. L.; Baudet, E.; Chahal, R.; Gutierrez-Arroyo, A.; Dumeige, Y.; Hardy, I.; Braud, A.; Soulard, R.; Camy, P.; Němec, P.; Palma, G.; Prudenzano, F.; Charrier, J.. - In: OPTICAL MATERIALS. - ISSN 0925-3467. - ELETTRONICO. - 75:(2018), pp. 109-115. [10.1016/j.optmat.2017.10.001]
Mid-infrared guided photoluminescence from integrated Pr3+-doped selenide ridge waveguides
Palma, G.;Prudenzano, F.;
2018-01-01
Abstract
Praseodymium-doped selenide thin films are deposited by radio frequency magnetron sputtering on thermally oxidized silicon wafers and undoped selenide layers. Ridge waveguides are then processed using photolithography and dry etching techniques. Under optical pumping at 1.55 μm, broadband guided mid-infrared photoluminescence is recorded for the first time for wavelengths above 4 μm from rare earth-doped integrated chalcogenides waveguides. Optical design confirmed that these active waveguides allow single-mode optical propagation at a wavelength of 4.70 μm.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
