In this paper a 2-D I-V MESFET model coupled with a 3-D thermal model is presented. The temperature dependence of the velocity-electric field expression proposed by Chang et al.  has been considered so as to evaluate the device characteristics and small-signal parameters at the actual channel temperature. The effect of the device self-heating has been included by a coupled electrothermal simulation. The thermal dependence of all physical parameters involved both in the electric model and in the thermal model has been taken into account.
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