In this paper a 2-D I-V MESFET model coupled with a 3-D thermal model is presented. The temperature dependence of the velocity-electric field expression proposed by Chang et al. [1] has been considered so as to evaluate the device characteristics and small-signal parameters at the actual channel temperature. The effect of the device self-heating has been included by a coupled electrothermal simulation. The thermal dependence of all physical parameters involved both in the electric model and in the thermal model has been taken into account.
Analytic model for temperature-Dependent I-V characteristics and small-signal parameters of GaAs MESFETs / Pesare, M.; Giorgio, A.; Perri, A. G.. - STAMPA. - (2001), pp. 21-23. (Intervento presentato al convegno Pacific Rim/International, Intersociety Electronic Packaging Technical/Business Conference and Exhibition tenutosi a Kauai, HI nel July 8-13, 2001).
Analytic model for temperature-Dependent I-V characteristics and small-signal parameters of GaAs MESFETs
Giorgio, A.;Perri, A. G.
2001-01-01
Abstract
In this paper a 2-D I-V MESFET model coupled with a 3-D thermal model is presented. The temperature dependence of the velocity-electric field expression proposed by Chang et al. [1] has been considered so as to evaluate the device characteristics and small-signal parameters at the actual channel temperature. The effect of the device self-heating has been included by a coupled electrothermal simulation. The thermal dependence of all physical parameters involved both in the electric model and in the thermal model has been taken into account.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
