In this paper a 2-D I-V MESFET model coupled with a 3-D thermal model is presented. The temperature dependence of the velocity-electric field expression proposed by Chang et al. [1] has been considered so as to evaluate the device characteristics and small-signal parameters at the actual channel temperature. The effect of the device self-heating has been included by a coupled electrothermal simulation. The thermal dependence of all physical parameters involved both in the electric model and in the thermal model has been taken into account.

Analytic model for temperature-Dependent I-V characteristics and small-signal parameters of GaAs MESFETs

Giorgio, A.;Perri, A. G.
2001

Abstract

In this paper a 2-D I-V MESFET model coupled with a 3-D thermal model is presented. The temperature dependence of the velocity-electric field expression proposed by Chang et al. [1] has been considered so as to evaluate the device characteristics and small-signal parameters at the actual channel temperature. The effect of the device self-heating has been included by a coupled electrothermal simulation. The thermal dependence of all physical parameters involved both in the electric model and in the thermal model has been taken into account.
Pacific Rim/International, Intersociety Electronic Packaging Technical/Business Conference and Exhibition
0791835405
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11589/13989
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