In this paper, the influence of gate length on the performance of GaAs MESFFiTs by a physical I-V model has been evaluated. The Chang-Fetterman electron mobility relationship has been used in the I-V model, based on the analytical solution of twodimensional Poisson equation and current-continuity equation. Numerical results are shown in terms of calculated I-V curves for MESFETs already presented in literature, by varying the gate length. These curves illustrate the good agreement with experimental data and with other numerical models. The higher simplicity, deeper physical insight and possibility of great extension to a fully physical C-V approach makes this model more attractive than those based on other methods.
|Titolo:||Influence of gate length on the performance of GaAs MESFETs by a physical I-V model|
|Data di pubblicazione:||1999|
|Nome del convegno:||6th IEEE International Conference on Electronics, Circuits and Systems, ICECS '99|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1109/ICECS.1999.814497|
|Appare nelle tipologie:||4.1 Contributo in Atti di convegno|