In this paper, we present the modeling and design of a new approach to detect an analyte for biochemical and biological sensing applications. It is based on a whispering-gallery-mode optical resonator coupled with a Fabry-Perot cavity in silicon-on-insulator technology. The theoretical model of the whole architecture includes the influence of all electrical and optical parameters, such as thin oxide thickness, silicon and poly silicon doping concentration, optical losses, wavelength and amplitude characteristics of the architecture, charge accumulation effects, and thermal effects. The very high sensitivity of this device, demonstrated by simulations, is due to the simultaneous influence of the two coupled resonators and the metal-oxide-semiconductor structure
Modeling and Design of a Microdisk Photonic Sensor for Biological Applications / Passaro, Vittorio; Casamassima, B.; DE LEONARDIS, Francesco; Dell'Olio, Francesco; Magno, F.. - (2007), pp. 62-67. (Intervento presentato al convegno 2nd IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2007 tenutosi a Bari, Italy nel June 26-27, 2007) [10.1109/IWASI.2007.4420010].
Modeling and Design of a Microdisk Photonic Sensor for Biological Applications
PASSARO, Vittorio;DE LEONARDIS, Francesco;Dell'Olio, Francesco;
2007-01-01
Abstract
In this paper, we present the modeling and design of a new approach to detect an analyte for biochemical and biological sensing applications. It is based on a whispering-gallery-mode optical resonator coupled with a Fabry-Perot cavity in silicon-on-insulator technology. The theoretical model of the whole architecture includes the influence of all electrical and optical parameters, such as thin oxide thickness, silicon and poly silicon doping concentration, optical losses, wavelength and amplitude characteristics of the architecture, charge accumulation effects, and thermal effects. The very high sensitivity of this device, demonstrated by simulations, is due to the simultaneous influence of the two coupled resonators and the metal-oxide-semiconductor structureI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
