A temperature dependent DC model of GaAs MESFETs was proposed for MMIC computer aided design (CAD) applications. The temperature dependence of the device threshold voltage and of the maximum saturation drain-source current allowed to characterize low and high-power GaAs MESFETs. Different MESFETs were subjected to different thermal conditions in order to confirm the validity and to verify the accuracy of the thermal model. The results were compared with the Rodriguez-Tellez model, showing improvements of accuracy up to 60%.
A Large-Signal Thermal Model of GaAs MESFETs for MMIC CAD Applications / Giorgio, Agostino; Perri, Anna Gina. - STAMPA. - (2001), pp. 1677-1682. (Intervento presentato al convegno Pacific RIM/International, Intersociety Electronic Packaging Technical/Business Conference and Exhibition, IPACK '01 tenutosi a Kauai, HI nel July 8-13, 2001).
A Large-Signal Thermal Model of GaAs MESFETs for MMIC CAD Applications
Giorgio, Agostino;Perri, Anna Gina
2001-01-01
Abstract
A temperature dependent DC model of GaAs MESFETs was proposed for MMIC computer aided design (CAD) applications. The temperature dependence of the device threshold voltage and of the maximum saturation drain-source current allowed to characterize low and high-power GaAs MESFETs. Different MESFETs were subjected to different thermal conditions in order to confirm the validity and to verify the accuracy of the thermal model. The results were compared with the Rodriguez-Tellez model, showing improvements of accuracy up to 60%.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
