Multi-channel, integrated front-end electronics suitable for Silicon Photomultiplier detectors and mainly intended for medical imaging applications has been developed in a CMOS standard technology, according to a current-mode approach. Full exploitation of the good performance of the detector in terms of fast response and gain has been made possible by this design approach. An 8-channel, self-triggered prototype with an on-chip ADC has been designed and realized, also featuring a good degree of programmability and sparse read-out capabilities. Characterization measurements, carried out by coupling the circuit to both an injection capacitance and a SiPM manufactured from FBK-irst, confirm the expected results in terms of overall charge to voltage gain, dynamic range (more than 70pC at 1% non-linearity error), equivalent input noise charge (about 50fC) and timing accuracy.
BASIC: An 8-channel front-end ASIC for Silicon Photomultiplier detectors / Corsi, Francesco; Foresta, M.; Marzocca, Cristoforo; Matarrese, Gianvito; Del Guerra, A.. - (2009), pp. 1082-1087. (Intervento presentato al convegno IEEE Nuclear Science Symposium, 2009, NSS '09 tenutosi a Orlando, Florida, USA nel 2009) [10.1109/NSSMIC.2009.5402431].
BASIC: An 8-channel front-end ASIC for Silicon Photomultiplier detectors
CORSI, Francesco;MARZOCCA, Cristoforo;MATARRESE, Gianvito;
2009-01-01
Abstract
Multi-channel, integrated front-end electronics suitable for Silicon Photomultiplier detectors and mainly intended for medical imaging applications has been developed in a CMOS standard technology, according to a current-mode approach. Full exploitation of the good performance of the detector in terms of fast response and gain has been made possible by this design approach. An 8-channel, self-triggered prototype with an on-chip ADC has been designed and realized, also featuring a good degree of programmability and sparse read-out capabilities. Characterization measurements, carried out by coupling the circuit to both an injection capacitance and a SiPM manufactured from FBK-irst, confirm the expected results in terms of overall charge to voltage gain, dynamic range (more than 70pC at 1% non-linearity error), equivalent input noise charge (about 50fC) and timing accuracy.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
