In this paper a 2-D I-V MESFET model coupled with a 3-D thermal model is presented. The thermal dependence of the velocity-electric field expression proposed by Chang et al. (1986), has been considered so as to evaluate the device characteristics and small-signal parameters at the actual channel temperature. The effect of the device self-heating has been included by a coupled electrothermal simulation. The thermal dependence of all the physical parameters involved both in the electric thermal model has been taken into account.
Autori: | |
Titolo: | A method to determine the thermal dependence of large and small signal equivalent circuit parameters of GaAs FETs |
Data di pubblicazione: | 2001 |
Nome del convegno: | 8th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2001. |
ISBN: | 0-7803-7057-0 |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/ICECS.2001.957714 |
Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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