In this paper a 2-D I-V MESFET model coupled with a 3-D thermal model is presented. The thermal dependence of the velocity-electric field expression proposed by Chang et al. (1986), has been considered so as to evaluate the device characteristics and small-signal parameters at the actual channel temperature. The effect of the device self-heating has been included by a coupled electrothermal simulation. The thermal dependence of all the physical parameters involved both in the electric thermal model has been taken into account.

A method to determine the thermal dependence of large and small signal equivalent circuit parameters of GaAs FETs

GIORGIO, Agostino;PERRI, Anna Gina
2001

Abstract

In this paper a 2-D I-V MESFET model coupled with a 3-D thermal model is presented. The thermal dependence of the velocity-electric field expression proposed by Chang et al. (1986), has been considered so as to evaluate the device characteristics and small-signal parameters at the actual channel temperature. The effect of the device self-heating has been included by a coupled electrothermal simulation. The thermal dependence of all the physical parameters involved both in the electric thermal model has been taken into account.
8th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2001.
0-7803-7057-0
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11589/16866
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