In this paper a 2-D I-V MESFET model coupled with a 3-D thermal model is presented. The thermal dependence of the velocity-electric field expression proposed by Chang et al. (1986), has been considered so as to evaluate the device characteristics and small-signal parameters at the actual channel temperature. The effect of the device self-heating has been included by a coupled electrothermal simulation. The thermal dependence of all the physical parameters involved both in the electric thermal model has been taken into account.
|Titolo:||A method to determine the thermal dependence of large and small signal equivalent circuit parameters of GaAs FETs|
|Data di pubblicazione:||2001|
|Nome del convegno:||8th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2001.|
|Digital Object Identifier (DOI):||10.1109/ICECS.2001.957714|
|Appare nelle tipologie:||4.1 Contributo in Atti di convegno|