A temperature dependent DC model of GaAs MESFETs is proposed. Modelling the dependence on temperature of the device threshold voltage and of the maximum saturation drain-source current allows to characterize GaAs MESFETs having long and short gate length with results, compared with the Rodriguez-Tellez model, showing improvements of accuracy up to 60%.
Modelling the dependence on temperature of the GaAs MESFET parameters / Giorgio, Agostino; Perri, Anna Gina. - (2003). (Intervento presentato al convegno ECCTD'03 European Conference on Circuit Theory and Design tenutosi a Cracovia, Polonia nel 1-4 settembre 2003).
Modelling the dependence on temperature of the GaAs MESFET parameters
GIORGIO, Agostino;PERRI, Anna Gina
2003-01-01
Abstract
A temperature dependent DC model of GaAs MESFETs is proposed. Modelling the dependence on temperature of the device threshold voltage and of the maximum saturation drain-source current allows to characterize GaAs MESFETs having long and short gate length with results, compared with the Rodriguez-Tellez model, showing improvements of accuracy up to 60%.File in questo prodotto:
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