The paper introduces an approach to the modelling of microwave and millimetre-wave FETs based on electromagnetic field theory and semiconductor physics. The described non linear model relates the geometrical, material and process parameters to the device electrical performance. A scalable model derived by the GEC-Marconi F20 process for MESFETs with different gate finger numbers and gate widths has been implemented in a commercial CAD and it has been tested by comparison with large signal measurements.
Multifinger effect in a GaAs FET distributed large signal CAD model / Avitabile, G.; Cidronali, A.; Vannini, G.; Manes, G.. - STAMPA. - (1996), pp. 159-162. (Intervento presentato al convegno IEEE International Electron Devices Meeting, 1996 tenutosi a San Francisco, CA nel December 8-11, 1996) [10.1109/IEDM.1996.553145].
Multifinger effect in a GaAs FET distributed large signal CAD model
G. Avitabile;
1996-01-01
Abstract
The paper introduces an approach to the modelling of microwave and millimetre-wave FETs based on electromagnetic field theory and semiconductor physics. The described non linear model relates the geometrical, material and process parameters to the device electrical performance. A scalable model derived by the GEC-Marconi F20 process for MESFETs with different gate finger numbers and gate widths has been implemented in a commercial CAD and it has been tested by comparison with large signal measurements.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.