The key DC parameters characterizing MOS technology are extracted from experimental I-V plots of a few scaled transistors. In order to minimize the effects of terminal resistances, we exploit the low current region of the transcharacteristic, without using numerical differentiation to reduce the effects of measurement noise. The method offers some advantages over other known procedures: no identification of particular points on the transcharacteristics is needed and high accuracy is achieved on the threshold extraction, which favourably affects the next extracted parameters. Experimental results obtained by testing the technique on different technological processes are given

Exploiting Low Drain Currents for the Extraction of DC MOSFET Parameters

F. Corsi;C. Marzocca;
1996

Abstract

The key DC parameters characterizing MOS technology are extracted from experimental I-V plots of a few scaled transistors. In order to minimize the effects of terminal resistances, we exploit the low current region of the transcharacteristic, without using numerical differentiation to reduce the effects of measurement noise. The method offers some advantages over other known procedures: no identification of particular points on the transcharacteristics is needed and high accuracy is achieved on the threshold extraction, which favourably affects the next extracted parameters. Experimental results obtained by testing the technique on different technological processes are given
8th Mediterranean Electrotechnical Conference on Industrial Applications in Power Systems, Computer Science and Telecommunications, MELECON 96
0-7803-3109-5
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11589/18688
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