The development of a high-performance DFB laser compatible with the CMOS technology is essential for the future development of silicon photonics. In this paper the preliminary results on modelling and design of a distributed feedback silicon laser are reported. The gain medium, which is a layer of erbium doped silicon-rich silicon oxide, is embedded in a horizontal slot waveguide. The designed device includes a grating with 140 periods and a quarter-wave phase shift at the grating middle. The threshold gain coefficient of the laser is 0.4 cm(-1) and the emission wavelength is very close to 1.55 mu m.
Modelling and design of an electrically-pumped DFB laser based on an erbium-doped silicon-rich silicon oxide layer embedded in a slot waveguide / Dell'Olio, F.; Gadaleta, M.; Tatoli, T.; Ciminelli, C.. - ELETTRONICO. - (2014). (Intervento presentato al convegno 2014 3rd Mediterranean Photonics Conference tenutosi a Trani, Italy nel May 7-9, 2014) [10.1109/MePhoCo.2014.6866499].
Modelling and design of an electrically-pumped DFB laser based on an erbium-doped silicon-rich silicon oxide layer embedded in a slot waveguide
Dell'Olio, F.;Tatoli, T.;Ciminelli, C.
2014-01-01
Abstract
The development of a high-performance DFB laser compatible with the CMOS technology is essential for the future development of silicon photonics. In this paper the preliminary results on modelling and design of a distributed feedback silicon laser are reported. The gain medium, which is a layer of erbium doped silicon-rich silicon oxide, is embedded in a horizontal slot waveguide. The designed device includes a grating with 140 periods and a quarter-wave phase shift at the grating middle. The threshold gain coefficient of the laser is 0.4 cm(-1) and the emission wavelength is very close to 1.55 mu m.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
