Design, fabrication and initial characterization of large-size InGaAsP/InP ring resonators for gyro applications are reported in this paper. The devices configuration includes a ring with a radius of 13 mm and a straight bus waveguide with tapered ends. Four cavities with the same radius and different values of the bus/ring gap have been fabricated by metal-organic vapour-phase-epitaxy, standard photolithography and reactive ion etching. Characterization results show that the resonator with nominal gap = 1.444 ae m has a quality factor exceeding 7x10(5) and resonance depth close to 10 dB.
|Titolo:||Design, fabrication, and preliminary test results of a new InGaAsP/InP high-Q ring resonator for gyro applications|
|Data di pubblicazione:||2012|
|Nome del convegno:||IEEE 24th International Conference on Indium Phosphide and Related Materials, IPRM 2012|
|Digital Object Identifier (DOI):||10.1109/ICIPRM.2012.6403336|
|Appare nelle tipologie:||4.1 Contributo in Atti di convegno|