Design, fabrication and initial characterization of large-size InGaAsP/InP ring resonators for gyro applications are reported in this paper. The devices configuration includes a ring with a radius of 13 mm and a straight bus waveguide with tapered ends. Four cavities with the same radius and different values of the bus/ring gap have been fabricated by metal-organic vapour-phase-epitaxy, standard photolithography and reactive ion etching. Characterization results show that the resonator with nominal gap = 1.444 ae m has a quality factor exceeding 7x10(5) and resonance depth close to 10 dB.
Design, fabrication, and preliminary test results of a new InGaAsP/InP high-Q ring resonator for gyro applications / Dell'Olio, F.; Ciminelli, C.; Armenise, M. N.; Soares, F. M.; Rehbein, W.. - STAMPA. - (2012), pp. 6403336.124-6403336.127. (Intervento presentato al convegno IEEE 24th International Conference on Indium Phosphide and Related Materials, IPRM 2012 tenutosi a Santa Barbara, CA nel August 27-30, 2012) [10.1109/ICIPRM.2012.6403336].
Design, fabrication, and preliminary test results of a new InGaAsP/InP high-Q ring resonator for gyro applications
F. Dell'Olio;C. Ciminelli;M. N. Armenise;
2012-01-01
Abstract
Design, fabrication and initial characterization of large-size InGaAsP/InP ring resonators for gyro applications are reported in this paper. The devices configuration includes a ring with a radius of 13 mm and a straight bus waveguide with tapered ends. Four cavities with the same radius and different values of the bus/ring gap have been fabricated by metal-organic vapour-phase-epitaxy, standard photolithography and reactive ion etching. Characterization results show that the resonator with nominal gap = 1.444 ae m has a quality factor exceeding 7x10(5) and resonance depth close to 10 dB.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
