In this paper a new technique to design a monolithic integrated In0.53Ga0.47As/InP front-end optical receiver is presented. The proposed method, based on the minimization of the noise sources in the receiver through research into the best geometrical and physical parameters, allows us to design the preamplifier directly coupled to the photodiode without any matching network. With a BER equal to 10-9 and a bit rate equal to 622 Mb/s, a front-end optical receiver sensitivity of -41 dBm was obtained.
|Titolo:||A new technique for designing high-performance monolithically integrated In0.53Ga0.47As/InP p-i-n/FET front-end optical receiver|
|Data di pubblicazione:||1996|
|Nome del convegno:||8th Mediterranean Electrotechnical Conference on Industrial Applications in Power Systems, Computer Science and Telecommunications, Melecon 96|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1109/MELCON.1996.551188|
|Appare nelle tipologie:||4.1 Contributo in Atti di convegno|