A current-mode approach is often used for the front-end electronics for Silicon Photomultipliers, to cope with the peculiar features of these detectors. Very low input resistance Rin and large bandwidth BW are classic design choices for the preamplifier, since it is assumed that the timing accuracy is optimized with this strategy. Here we show that this design approach leads to non-optimal results, due to the presence of parasitic interconnection inductance between the detector and the front-end. An approximate model, able to reproduce the behavior of the circuit during the fast rising edge of the output pulse, has been employed to analyze the influence of the interconnection inductance on the slope of the signal. Thus, considering a typical current-mode preamplifier, the existence of Rin-BW pairs which optimize the timing accuracy of the system has been demonstrated.
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|Titolo:||Effects of the Coupling Parasitics on the Design of Read-out Electronics for SiPM Detectors|
|Data di pubblicazione:||2014|
|Nome del convegno:||1st Workshop on the State of the Art and Challenges of Research Effort at POLIBA (SCORE@POLIBA’14)|
|Appare nelle tipologie:||4.1 Contributo in Atti di convegno|