In this review we present a comparative study of CNTFETs and MOSFET devices, through the design of self-biased cascode current mirror. In particular the CNTFET used is a C-CNTFET and the MOSFET is in 32 nm technology to have comparable results. All simulations are performed in Advanced Design System, which is compatible the Verilog-A programming language. The obtained results show the overall improvement of the performance of the current mirror based on CNTFET with an higher output resistance without being disadvantaged in terms of current gain.
A Comparative Study of CNTFET and MOSFET Devices through the Design of Current Mirrors / Marani, Roberto; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF ADVANCES IN ENGINEERING AND TECHNOLOGY. - ISSN 2231-1963. - ELETTRONICO. - 13:4(2020), pp. 116-122.
A Comparative Study of CNTFET and MOSFET Devices through the Design of Current Mirrors
Roberto MaraniSoftware
;Anna Gina Perri
Conceptualization
2020-01-01
Abstract
In this review we present a comparative study of CNTFETs and MOSFET devices, through the design of self-biased cascode current mirror. In particular the CNTFET used is a C-CNTFET and the MOSFET is in 32 nm technology to have comparable results. All simulations are performed in Advanced Design System, which is compatible the Verilog-A programming language. The obtained results show the overall improvement of the performance of the current mirror based on CNTFET with an higher output resistance without being disadvantaged in terms of current gain.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
