The paper reports on the design of a silicon photonic TM-pass polarizer intended for photonic integrated circuits with a high component density. The device, whose design is compliant with the technological constraints imposed by a typical state-of-the-art silicon photonic process, exhibits a record IL of 0.05 dB @ 1.55 μm, a high ER of 38 dB @ 1.55 μm, and a broadband operation with IL<; 1.7 dB and ER>30 dB over 200 nm covering the S, C, and L bands.
TM-Pass Polarizer for Ultradense High-Performance Photonic Integrated Circuits / Dhingra, Nikhil; Dell’Olio, Francesco. - ELETTRONICO. - (2020). (Intervento presentato al convegno 2020 IEEE Photonics Conference, IPC 2020 tenutosi a Virtual Meeting (Vancouver, Canada) nel September 28 - October 1, 2020) [10.1109/IPC47351.2020.9252439].
TM-Pass Polarizer for Ultradense High-Performance Photonic Integrated Circuits
Francesco Dell’Olio
2020-01-01
Abstract
The paper reports on the design of a silicon photonic TM-pass polarizer intended for photonic integrated circuits with a high component density. The device, whose design is compliant with the technological constraints imposed by a typical state-of-the-art silicon photonic process, exhibits a record IL of 0.05 dB @ 1.55 μm, a high ER of 38 dB @ 1.55 μm, and a broadband operation with IL<; 1.7 dB and ER>30 dB over 200 nm covering the S, C, and L bands.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
