In this paper we review the issue about the modelling of Carbon NanoTube Field Effect Transistors (CNTFETs), considering also the temperature effects on I-V characteristics of device. In particular we consider a compact, semi-empirical model, already proposed by us, performing I-V characteristic simulations, comparing our results with those obtained with a numerical model online available and obtaining output characteristics comparable but with a lower CPU calculation time.
A Review on Modelling of Carbon Nanotube Field Effect Transistors / Marani, Roberto; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF ADVANCES IN ENGINEERING AND TECHNOLOGY. - ISSN 2231-1963. - ELETTRONICO. - 14:1(2021), pp. 9-16.
A Review on Modelling of Carbon Nanotube Field Effect Transistors
Roberto MaraniSoftware
;Anna Gina Perri
Conceptualization
2021-01-01
Abstract
In this paper we review the issue about the modelling of Carbon NanoTube Field Effect Transistors (CNTFETs), considering also the temperature effects on I-V characteristics of device. In particular we consider a compact, semi-empirical model, already proposed by us, performing I-V characteristic simulations, comparing our results with those obtained with a numerical model online available and obtaining output characteristics comparable but with a lower CPU calculation time.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
