In this paper a mathematical model for the solution of the non-linear 3-D heat equation for GaAs MESFETs is presented. The electrothermal feedback has been implemented by calculating the FET drain current at the actual channel temperature. The thermal solution has been achieved by the Kirchhoff transformation, which accounts for the temperature-dependent thermal conductivity, and the 2-D Fourier transform method.
Electrothermal model of multilayer structure for the design of GaAs integrated circuit devices / Pesare, M.; Giorgio, Agostino; Perri, Anna Gina. - (2000), pp. 146-149. (Intervento presentato al convegno The 7th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2000. tenutosi a Jounieh, Lebanon nel December 17-20, 2000) [10.1109/ICECS.2000.911505].
Electrothermal model of multilayer structure for the design of GaAs integrated circuit devices
GIORGIO, Agostino;PERRI, Anna Gina
2000
Abstract
In this paper a mathematical model for the solution of the non-linear 3-D heat equation for GaAs MESFETs is presented. The electrothermal feedback has been implemented by calculating the FET drain current at the actual channel temperature. The thermal solution has been achieved by the Kirchhoff transformation, which accounts for the temperature-dependent thermal conductivity, and the 2-D Fourier transform method.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
