In this paper a mathematical model for the solution of the non-linear 3-D heat equation for GaAs MESFETs is presented. The electrothermal feedback has been implemented by calculating the FET drain current at the actual channel temperature. The thermal solution has been achieved by the Kirchhoff transformation, which accounts for the temperature-dependent thermal conductivity, and the 2-D Fourier transform method.

Electrothermal model of multilayer structure for the design of GaAs integrated circuit devices

GIORGIO, Agostino;PERRI, Anna Gina
2000

Abstract

In this paper a mathematical model for the solution of the non-linear 3-D heat equation for GaAs MESFETs is presented. The electrothermal feedback has been implemented by calculating the FET drain current at the actual channel temperature. The thermal solution has been achieved by the Kirchhoff transformation, which accounts for the temperature-dependent thermal conductivity, and the 2-D Fourier transform method.
The 7th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2000.
0-7803-6542-9
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11589/21990
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • Scopus 1
  • ???jsp.display-item.citation.isi??? 0
social impact