Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane structural asymmetry in the device, both of which can be difficult to implement in practical applications. Here, we report bias-field-free SOT switching in a single perpendicular CoTb layer with an engineered vertical composition gradient. The vertical structural inversion asymmetry induces strong intrinsic SOTs and a gradient-driven Dzyaloshinskii–Moriya interaction (g-DMI), which breaks the in-plane symmetry during the switching process. Micromagnetic simulations are in agreement with experimental results, and elucidate the role of g-DMI in the deterministic switching processes. This bias-field-free switching scheme for perpendicular ferrimagnets with g-DMI provides a strategy for efficient and compact SOT device design.

Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient / Zheng, Z.; Zhang, Y.; Lopez-Dominguez, V.; Sanchez-Tejerina, L.; Shi, J.; Feng, X.; Chen, L.; Wang, Z.; Zhang, Z.; Zhang, K.; Hong, B.; Xu, Y.; Zhang, Y.; Carpentieri, M.; Fert, A.; Finocchio, G.; Zhao, W.; Khalili Amiri, P.. - In: NATURE COMMUNICATIONS. - ISSN 2041-1723. - STAMPA. - 12:1(2021), p. 4555.4555. [10.1038/s41467-021-24854-7]

Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient

Wang Z.;Carpentieri M.;
2021-01-01

Abstract

Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane structural asymmetry in the device, both of which can be difficult to implement in practical applications. Here, we report bias-field-free SOT switching in a single perpendicular CoTb layer with an engineered vertical composition gradient. The vertical structural inversion asymmetry induces strong intrinsic SOTs and a gradient-driven Dzyaloshinskii–Moriya interaction (g-DMI), which breaks the in-plane symmetry during the switching process. Micromagnetic simulations are in agreement with experimental results, and elucidate the role of g-DMI in the deterministic switching processes. This bias-field-free switching scheme for perpendicular ferrimagnets with g-DMI provides a strategy for efficient and compact SOT device design.
2021
Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient / Zheng, Z.; Zhang, Y.; Lopez-Dominguez, V.; Sanchez-Tejerina, L.; Shi, J.; Feng, X.; Chen, L.; Wang, Z.; Zhang, Z.; Zhang, K.; Hong, B.; Xu, Y.; Zhang, Y.; Carpentieri, M.; Fert, A.; Finocchio, G.; Zhao, W.; Khalili Amiri, P.. - In: NATURE COMMUNICATIONS. - ISSN 2041-1723. - STAMPA. - 12:1(2021), p. 4555.4555. [10.1038/s41467-021-24854-7]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/236246
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