Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane structural asymmetry in the device, both of which can be difficult to implement in practical applications. Here, we report bias-field-free SOT switching in a single perpendicular CoTb layer with an engineered vertical composition gradient. The vertical structural inversion asymmetry induces strong intrinsic SOTs and a gradient-driven Dzyaloshinskii–Moriya interaction (g-DMI), which breaks the in-plane symmetry during the switching process. Micromagnetic simulations are in agreement with experimental results, and elucidate the role of g-DMI in the deterministic switching processes. This bias-field-free switching scheme for perpendicular ferrimagnets with g-DMI provides a strategy for efficient and compact SOT device design.

Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient / Zheng, Zhenyi; Zhang, Yue; Lopez-Dominguez, Victor; Sanchez-Tejerina, Luis; Shi, Jiacheng; Feng, Xueqiang; Chen, Lei; Wang, Zilu; Zhang, Zhizhong; Zhang, Kun; Hong, Bin; Xu, Yong; Zhang, Youguang; Carpentieri, Mario; Fert, Albert; Finocchio, Giovanni; Zhao, Weisheng; Amiri, Pedram Khalili. - In: NATURE COMMUNICATIONS. - ISSN 2041-1723. - ELETTRONICO. - 12:1(2021). [10.1038/s41467-021-24854-7]

Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient

Carpentieri, Mario;
2021-01-01

Abstract

Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane structural asymmetry in the device, both of which can be difficult to implement in practical applications. Here, we report bias-field-free SOT switching in a single perpendicular CoTb layer with an engineered vertical composition gradient. The vertical structural inversion asymmetry induces strong intrinsic SOTs and a gradient-driven Dzyaloshinskii–Moriya interaction (g-DMI), which breaks the in-plane symmetry during the switching process. Micromagnetic simulations are in agreement with experimental results, and elucidate the role of g-DMI in the deterministic switching processes. This bias-field-free switching scheme for perpendicular ferrimagnets with g-DMI provides a strategy for efficient and compact SOT device design.
2021
Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient / Zheng, Zhenyi; Zhang, Yue; Lopez-Dominguez, Victor; Sanchez-Tejerina, Luis; Shi, Jiacheng; Feng, Xueqiang; Chen, Lei; Wang, Zilu; Zhang, Zhizhong; Zhang, Kun; Hong, Bin; Xu, Yong; Zhang, Youguang; Carpentieri, Mario; Fert, Albert; Finocchio, Giovanni; Zhao, Weisheng; Amiri, Pedram Khalili. - In: NATURE COMMUNICATIONS. - ISSN 2041-1723. - ELETTRONICO. - 12:1(2021). [10.1038/s41467-021-24854-7]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/236246
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