A novel all-dielectric metasurface in silicon-on-insulator technology made of arrayed circular slots is proposed and theoretically studied. The metasurface exhibits quasi-bound states in the continuum resonances, having an ultra-high Q-factor up to 5x10(8).
All-Dielectric Slot Metasurface with Ultra-High-Q resonances / Algorri, J. F.; Dellolio, Francesco; Roldán-Varona, P.; Rodríguez-Cobo, L.; López-Higuera, J. M.; Sánchez-Pena, J. M.; Zografopoulos, D. C.. - STAMPA. - (2021). (Intervento presentato al convegno Conference on Lasers and Electro-Optics, CLEO 2021 nel May 09-14, 2021) [10.1364/CLEO_AT.2021.JW1A.131].
All-Dielectric Slot Metasurface with Ultra-High-Q resonances
DellOlio, Francesco;
2021-01-01
Abstract
A novel all-dielectric metasurface in silicon-on-insulator technology made of arrayed circular slots is proposed and theoretically studied. The metasurface exhibits quasi-bound states in the continuum resonances, having an ultra-high Q-factor up to 5x10(8).File in questo prodotto:
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