In this paper we initially present two CNTFET models: the first is already proposed by us and the second is the Stanford model, proposing a method to match the output characteristics and transconductance characteristics between these two models. Then we describe a compact noise model, used to simulate the performance of a NOT gate, in order to analyze how the noise sources constitute a significant limitation in the design of circuits based on CNTFET. All simulations are obtained using the programming language Verilog-A on the simulator Advanced Design System (ADS), highlighting the solutions proposed in order to use this software.
Implementation of Noise Effects on CNTFET-based NOT Gate in Verilog-A / Marani, Roberto; Perri, Anna Gina. - In: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. - ISSN 2162-8777. - ELETTRONICO. - 11:6(2022). [10.1149/2162-8777/ac7580]
Implementation of Noise Effects on CNTFET-based NOT Gate in Verilog-A
Roberto MaraniSoftware
;Anna Gina Perri
Conceptualization
2022-01-01
Abstract
In this paper we initially present two CNTFET models: the first is already proposed by us and the second is the Stanford model, proposing a method to match the output characteristics and transconductance characteristics between these two models. Then we describe a compact noise model, used to simulate the performance of a NOT gate, in order to analyze how the noise sources constitute a significant limitation in the design of circuits based on CNTFET. All simulations are obtained using the programming language Verilog-A on the simulator Advanced Design System (ADS), highlighting the solutions proposed in order to use this software.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.