In this paper we present a description of the physical principles relating to heterostructures and then we analyse the heterojunctions Si-Ge, simulating, in particular, the performance of a Si-Ge Photodetector.
A SIMULATION STUDY OF SILICON-GERMANIUM HETEROSTRUCTURE DEVICES / Marani, Roberto; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF ADVANCES IN ENGINEERING AND TECHNOLOGY. - ISSN 2231-1963. - ELETTRONICO. - 15:4(2022), pp. 27-34.
A SIMULATION STUDY OF SILICON-GERMANIUM HETEROSTRUCTURE DEVICES
Roberto MaraniSoftware
;Anna Gina Perri
Conceptualization
2022-01-01
Abstract
In this paper we present a description of the physical principles relating to heterostructures and then we analyse the heterojunctions Si-Ge, simulating, in particular, the performance of a Si-Ge Photodetector.File in questo prodotto:
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