We theoretically and experimentally investigate a metasurface supporting a silicon-slot quasi-bound state in the continuum (qBIC) mode resonating in the near-infrared spectrum. The metasurface is composed of circular slots etched in a silicon layer on a sapphire substrate. The symmetry of the metasurface unit cell is reduced in order to provide access to the symmetry-protected mode, whose properties are investigated by finite-element full-wave and eigenfrequency analysis. The measured transmittance spectra verify the excitation of the investigated qBIC mode with experimental quality factors exceeding 700. The near-field distribution of the resonant qBIC mode shows strong field confinement in the slots, leading to high sensitivity values for refractometry.
Experimental demonstration of a silicon-slot quasi-bound state in the continuum in near-infrared all-dielectric metasurfaces / Algorri, J. F.; Dell'Olio, F.; Ding, Y.; Labbe, F.; Dmitriev, V.; Lopez-Higuera, J. M.; Sanchez-Pena, J. M.; Andreani, L. C.; Galli, M.; Zografopoulos, D. C.. - In: OPTICS AND LASER TECHNOLOGY. - ISSN 0030-3992. - 161:(2023), p. 109199.109199. [10.1016/j.optlastec.2023.109199]
Experimental demonstration of a silicon-slot quasi-bound state in the continuum in near-infrared all-dielectric metasurfaces
Dell'Olio F.;
2023-01-01
Abstract
We theoretically and experimentally investigate a metasurface supporting a silicon-slot quasi-bound state in the continuum (qBIC) mode resonating in the near-infrared spectrum. The metasurface is composed of circular slots etched in a silicon layer on a sapphire substrate. The symmetry of the metasurface unit cell is reduced in order to provide access to the symmetry-protected mode, whose properties are investigated by finite-element full-wave and eigenfrequency analysis. The measured transmittance spectra verify the excitation of the investigated qBIC mode with experimental quality factors exceeding 700. The near-field distribution of the resonant qBIC mode shows strong field confinement in the slots, leading to high sensitivity values for refractometry.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
